Title of article
IV–VI compositional MQWs and SLs for optoelectronic applications
Author/Authors
Tetyorkin، نويسنده , , V.V. and Sizov، نويسنده , , F.F. and Svechnikov، نويسنده , , S.V. and Golovin، نويسنده , , V.G.، نويسنده ,
Pages
4
From page
76
To page
79
Abstract
Optical, photoelectrical and electrical properties of narrow-gap PbTePbSnTe multiple quantum wells (MQWs) were investigated. Evidence is presented that such MQSs are type I structures with the thickness of the wells d = 300–900 nm Quasi-2D behavior of the carriers was observed. Photosensitivity of the MQWs was observed up to room temperature.
Keywords
superlattices , Optoelectronics , Multiple quantum wells
Journal title
Astroparticle Physics
Record number
2063489
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