Growth and characterization of strain-compensated InAsPGaInP and InGaAsGaInP multiple quantum wells

We have shown that strain compensation is effective in increasing the critical layer thickness or the critical number of periods in a multiple quantum well (MQW) structure and in improving thermal stability. Compared with a strain-uncompensated InAs0.4P0.6InP MQW (1.3% strain) on InP substrates, strain-compensated InAs0.4P0.6GayIn1 − yP MQW in a p-i-n structure exhibits superior structural and optical properties, especially electroabsorption characteristics that is suitable for modulator applications at 1.3 μm. Strain-compensated In0.3Ga0.7AsGayIn1 − yP MQWs on GaAs substrates exhibit better photoluminescence properties and are shown to be more thermally stable.