Electron mobility in low temperature grown gallium arsenide

We investigated theoretically the electron mobility in low temperature grown GaAs (LT GaAs), based on the ‘internal Schottky barrier’ model, utilizing a Monte Carlo method. We used a novel approach to overcome the problem of inhomogeneity of the internal electric field due to the presence of precipitates. The behaviour of mobility as a function of temperature in LT GaAs for precipitate concentrations in the range 1015–1017 cm−3 is presented. This is the first result of mobility calculation in LT GaAs, based on the Monte Carlo method, reported to date. The dependence of mobility on the doping concentration is also presented.