Title of article :
Hydrogen trapping by defects in semiconductors studied by anelastic spectroscopy
Author/Authors :
Palumbo، نويسنده , , O. and Cantelli، نويسنده , , Selim R. and Cordero-Reyes، نويسنده , , F.، نويسنده ,
Abstract :
We review some results obtained by anelastic spectroscopy on H-related defects in III–V semiconductors. Anelastic measurements on InP lead to the formulation of a model explaining the conversion to the semi-insulating (SI) state. Moreover, in GaAs:Zn an extraordinarily fast relaxation rate has been measured and a possible explanation has been suggested. This results are reviewed and discussed in the light of new experiments on InP:Zn, whose spectrum shows a relaxation process similar to the one in GaAs:Zn.
Keywords :
Gallium arsenide , Hydrogen , Indium phosphide , Point defect complexes
Journal title :
Astroparticle Physics
