Author/Authors :
Billen، نويسنده , , K. and Kelly، نويسنده , , M.J. and Hutchinson، نويسنده , , S.V. and Henini، نويسنده , , M. and Hill، نويسنده , , G.، نويسنده ,
Abstract :
It is shown that it is possible to implant protons through a double-barrier resonant-tunnelling diode structure without causing irreparable degradation of its I-V characteristics: both the 295 K and 77 K I-V characteristics are degraded severely by the implantation process, but annealing of the proton-implanted diode recovers its as-grown performance almost completely. The implications of this for the fabrication of three-dimensional electronic circuitry are described.
Keywords :
Gallium arsenide , Semiconductor for devices , Ion implantation , tunnelling
