Photoluminescence properties of AlGaP superlattices

AlPGaP ordered superlattices (o-SL) and disordered superlattices (d-SL) are grown by atmospheric organometallic vapor phase epitaxy and their photoluminescence (PL) properties are investigated. The PL from AlPmGaPn (m, n = 1, 2, 3) d-SL is observed clearly though that from AlP2GaP2o-SL, which has the same average layer thickness as the d-SL, is not observed. The clear peak is observed up to 30 K from AlPmGaPnm, n = 1, 2, 3) d-SL as well as m, n = 2, 4, 6) and m, n = 3, 6, 9) d-SLs. The PL integrated intensity from d-SLs is less dependent on the reduction of the superlattice period.