Oxygen distribution in Czochralski silicon melts measured by an electrochemical oxygen sensor

Oxygen concentration and distribution in Czochralski silicon melts were investigated by an electrochemical oxygen sensor, based on the solid ionic conductor zirconia. Crucible rotation was found to have a strong influence on the oxygen distribution in the silicon melt. The forced convection driven by the crucible rotation dominates the oxygen transport in the melt compared to diffusion. Concentration variations in the melt measured during crystal growth were subsequently compared with changes of the oxygen content of the grown crystal.