Author/Authors :
Bertomeu، نويسنده , , J. and Puigdollers، نويسنده , , J. and Peirَ، نويسنده , , D. and Cifre، نويسنده , , J. and Delgado، نويسنده , , J.C. and Andreu، نويسنده , , J.، نويسنده ,
Abstract :
The presence of hydrogen in polysilicon films obtained at low temperatures by hot-wire CVD and the post-deposition oxidation by air-exposure of the films are studied in this paper. The experimental results from several characterization techniques (infrared spectroscopy, X-ray photoelectron spectroscopy, secondary ion mass spectrometry and wavelength dispersive spectroscopy) showed that hydrogen and oxygen are homogeneously distributed at grain boundaries throughout the depth of the films. Hydrogen is introduced during the growth process and its concentration is higher in samples deposited at lower temperatures. Oxygen diffuses along the grain boundaries and binds to silicon atoms, mainly in Si2O groups.
