Evaluation of the quality of HMCZ Si single crystals with a diameter of 200 mm

We studied the quality of Si single crystals with a diameter of 200 mm grown by the horizontal magnetic field applied Czochralski (HMCZ) method. The dopant impurity fluctuation of HMCZ crystals is less than that of CZ ones when a crystal is grown by setting the seed rotation rate at 15 rpm. The micro-distribution profiles of interstitial oxygen concentration ([Oi]) exhibit the same behavior as those of CZ crystals except for low [Oi]. Moreover, the oxygen precipitation and the grown-in crystal defects of HMCZ crystals exhibit the same behavior as those of CZ ones. We believe HMCZ Si wafers with low [Oi] can be used for ULSI fabrication without any change of the fabrication process.