Detailed analysis of β-SiC formation by high dose carbon ion implantation in silicon

The detailed characterization of β-SiC formation in silicon by high dose carbon ion implantation is reported. A buried layer containing β-SiC precipitates of 7–10 nm in size is directly formed by implanting at 500 °C. The precipitates formed are almost perfectly aligned with the silicon substrate, but they present incoherent interfaces to it, and are nearly free of defects. After implantation, the crystallinity of β-SiC precipitates is improved by an annealing step, although their size remains unchanged.