Title of article
Diffusion constant of ga, in and as adatoms on gaas (001) surface: molecular dynamics calculations
Author/Authors
Palma، نويسنده , , A. and Semprini، نويسنده , , E. and Talamo، نويسنده , , A. and Tomassini، نويسنده , , N.، نويسنده ,
Pages
4
From page
135
To page
138
Abstract
A valence force field to reproduce both the phonon dispersion curves of crystalline GaAs and first principle derived interaction energies of Ga, In and As adatoms on GaAs (001) surface has been optimized. Calculations of diffusion constant of Ga, In and As atoms on the GaAs surface have been performed by molecular dynamics classical trajectory simulations.
Keywords
surface diffusion , Gallium arsenide
Journal title
Astroparticle Physics
Record number
2063868
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