Title of article
New trends in atomic scale simulation of wet chemical etching of silicon with koh
Author/Authors
R.A and Camon، نويسنده , , H. and Moktadir، نويسنده , , Z. and Djafari-Rouhani، نويسنده , , M.، نويسنده ,
Pages
4
From page
142
To page
145
Abstract
A new atomic scale model has been developed to simulate anisotropic etching of silicon in KOH solutions. This model is based on the influence of the number of hydroxide groups attached to atoms. Etch rates and macroscopic activation energies have been calculated and compared with experimental data. Microscopic surface roughness has been investigated for 〈100〉 and 〈111〉 surface.
Keywords
Etching , Silicon , Surface roughness
Journal title
Astroparticle Physics
Record number
2063871
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