Low power pulsed laser annealing of Zn+-implanted InP: first endeavours

In this paper we report a first attempt to apply the low power pulsed-laser annealing (LPPLA) technique, already successfully used on implanted GaAs, to a low dose Zn-implanted InP. The aim of this work is to check the LPPLA efficiency and to define, in analogy with the GaAs case, the eventual existence for the InP of an energy window in which the crystallinity is recovered without stoichiometric changes of the material. tion high energy electron diffraction analysis and electrical measurements have revealed good crystalline reordering and a decrease in the sheet resistivity in the laser-annealed samples.