Characterization of MQW heterostructures with acoustooptical cathodoluminescence spectrometer

We report a development and application to SEM studies of semiconductors of a cathodoluminescence spectrometer based on acoustooptical filters, that has several advantages in comparison with commonly used spectrometers and can be directly placed on a SEM electron-beam column. Digital control and high transmission of the unit permit to measure spectra of cathodoluminescence emission of a solid solution of A3B5 semiconductors and to study an image of the nonradiative defects in a multi quantum well active layer of laser heterostructures. The results are discussed on the point of view of initial stages of growth of an InP layer on the surface of InGaAs layer during the MOCVD epitaxial growth of heterostructures.