Reconstruction of recombination properties of extended defects in Si

Electron beam induced current (EBIC) profiles of extended defects in plastically deformed Si are studied. Dependences of profile width and contrast on excitation level are found to be different for the defects with different impurity atmosphere. Numerical simulations of the EBIC profiles for dislocations and slip planes show that experimental data can only be described by taking into account recombination at point defects surrounding the extended defects. The characteristic length of point defect distribution is found to be about 1 μm.