Author/Authors :
Ogata، نويسنده , , Ken-ichi and Kawaguchi، نويسنده , , Daisuke and Kera، نويسنده , , Takashi and Fujita، نويسنده , , Shizuo and Fujita، نويسنده , , Shigeo، نويسنده ,
Abstract :
Effects of thermal annealing on the layer quality of p-type ZnSe:N grown by metalorganic vapor phase epitaxy (MOVPE) were investigated. Although the thermal annealing at 500 °C is a key to obtain high NA - ND, it causes degradation of the layer quality in the same time. Annealing temperatures should be carefully chosen so that activation of acceptors effectively occurs while degradation of quality can be suppressed. A slightly lower annealing temperature (~ 400–450 °C) seems to offer the possibility of solving the above contradiction.
