Author/Authors :
Fischer، نويسنده , , F. and Laubender، نويسنده , , J. and Lugauer، نويسنده , , H.J. and Litz، نويسنده , , T. and Weingنrtner، نويسنده , , A. T. Zehnder، نويسنده , , U. and Gerhard، نويسنده , , T. and Ossau، نويسنده , , W. and Schüll، نويسنده , , K. and Waag، نويسنده , , A. and Landwehr، نويسنده , , G.، نويسنده ,
Abstract :
Light-emitting diodes with BeMgZnSe cladding layers and an active region formed by a ZnSe, BeZnSe or BeZnSeTe single quantum well are characterized by means of current-voltage measurements and electroluminescence at room temperature. A longterm stability exceeding 4000 h has been estimated in first experiments at low current densities (15 A cm−2). The emission wavelength was tuned between 452 and 518 nm by varying the composition of the quantum well material. Additionally, first results on the n-type doping of BeMgZnSe during molecular beam epitaxy have been obtained. The properties of ohmic contacts to n-type epilayers are discussed.
