Author/Authors :
Marcon، نويسنده , , J. and Koumetz، نويسنده , , S. and Ketata، نويسنده , , K. and Ketata، نويسنده , , M. and Launay، نويسنده , , P.، نويسنده ,
Abstract :
Be diffusion during post-growth annealing has been studied in InGaAs epitaxial layers. To explain the observed concentration profiles, a point defect nonequilibrium model has been proposed. A good agreement has been obtained between experimental and calculated data. The point defect concentration in epitaxial layers during diffusion in InGaAs is also discussed.
