Author/Authors :
Jurisch، نويسنده , , M. and Flade، نويسنده , , T. and Hoffmann، نويسنده , , B. and Kِhler، نويسنده , , A. and Korb، نويسنده , , J. and Kretzer، نويسنده , , U. and Reinhold، نويسنده , , Th. and Weinert، نويسنده , , B.، نويسنده ,
Abstract :
A semi-quantitative understanding of the thermochemistry of boron oxide gettering ability and the influence of gas phase composition on the GaAs-melt in synthesis and growth allows LEC-growth of carbon controlled semi-insulating GaAs-crystals on a production scale. By optimization of thermal growth conditions and of a two-step post-growth ingot annealing procedure the scatter of electrical parameters among crystals has been significantly reduced and the homogeneity of individual crystals on a macroscopic and mesoscopic scale has been improved.
