Title of article
Material and fabrication-related limitations to high-power operation of GaAs/AlGaAs and InGaAs/AlGaAs laser diodes
Author/Authors
Jakubowicz، نويسنده , , A.، نويسنده ,
Pages
5
From page
359
To page
363
Abstract
This paper discusses material/device and fabrication problems related to the high-power performance of fundamental-mode GaAs/AlGaAs and InGaAs/AlGaAs laser diodes. Various views on the stability of these devices and their degradation are presented. Bulk-, mirror- and ohmic-contact-related issues, including the physics/chemistry of defect formation, are discussed.
Keywords
stress field , strain field , Epitaxial layers , laser diodes
Journal title
Astroparticle Physics
Record number
2064509
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