Author/Authors :
B. Gentinne، نويسنده , , B. and Eggermont، نويسنده , , J.-P. and Flandre، نويسنده , , D. and Colinge، نويسنده , , J.-P.، نويسنده ,
Abstract :
Thin-film fully depleted complementary metal oxide semiconductor (CMOS) silicon-on-insulator (SOI) technology is currentlly considered as the best mature contender for high-temperature analog or mixed-mode IC applications in the 200–400 °C temperature range. This is demonstrated by measurement results of the high-temperature performances of several operational transconductance amplifiers (OTA) with increasing architecture complexity. High-temperature design techniques are also proposed and validated by measurements.
Keywords :
High-temperature operation , integrated circuits , MOS devices , Silicon-on-insulator
