Thin film diamond metal-insulator field effect transistor for high temperature applications

bstract temperature depletion-mode metal-insulator field effect transistor (MISFET) has been fabricated from thin film polycrystalline diamond with a p-type (boron doped) channel and an insulating diamond gate. This device was successfully operated at 300 °C with low gate leakage currents, displaying pinch-off when in depletion and high levels of channel current modulation in enhancement. A transconductance value of 174 μS mm−1 has been measured, the highest reported value to date for this type of device.