Author/Authors :
Lebedev، نويسنده , , Alexander A. and Savkina، نويسنده , , Natalia S. and Strelʹchuk، نويسنده , , Anatolii M. and Tregubova، نويسنده , , Alla S. and Scheglov، نويسنده , , Mikhail P.، نويسنده ,
Abstract :
The objective of the present work was to prepare heterojunctions in the 3C-6H system and to investigate their characteristics. The heteroepitaxy was carried out using sublimation epitaxy (SE) in an open system. The presence of 3C-SiC in the deposited structures was confirmed by X-ray diffraction. The p-n junction parameters were investigated from current-voltage and capacitance-voltage measurements, electroluminescence spectrum and DLTS data.
