Silicon carbide for high-temperature microelectronics: recent advances in material growth via gas source MBE and device research

Thin films of silicon carbide (SiC) have been grown at 1000–1500 °C on vicinal and on-axis α(6H)-SiC(0001) substrates by gas-source molecular beam epitaxy (GSMBE). Growth using only SiH4 and C2H4 resulted in 3C-SiC(111) epilayers under all deposition conditions and substrate orientations. With the addition of H2, films of 6H-SiC(0001) were deposited on the vicinal substrates at deposition temperatures ≥ 1350 °C. Kinetic analysis showed all depositions to be surface reaction controlled. In situ doping was achieved by intentional introduction of nitrogen and aluminum into the growing crystals. SiC-based microelectronic devices operable at elevated temperatures, including several types of power metal oxide semiconductor field effect transistors (MOSFETs), bipolar transistors, and thyristors have been fabricated. The properties of selected devices and the circuits made from them are described.