Author/Authors :
Lebedeva، نويسنده , , Alexander A. and Tregubova، نويسنده , , Alla S. and Chelnokova، نويسنده , , Valentin E. and Scheglov، نويسنده , , Mikhail P. and Glagovskii، نويسنده , , Alʹfred A.، نويسنده ,
Abstract :
6H-SiC substrates grown by Lely method and modified Lely (LM) methods have been studied by X-ray diffractometry and X-ray topography. It has been shown that structural perfection of Lely substrates is significantly higher than that of LM substrates: the former have a dislocation density of 101–103 dis cm−2 (as compared with 103–105 dis cm−2 for latter). Our experiments show that with the use of modernized growth equipment it is possible to obtain Lely substrates with high structural perfection and an area equal to that of LM substrates (1–1.5″ diameter).
