Author/Authors :
Bakin، نويسنده , , A.S. and Dorozhkin، نويسنده , , S.L and Bogachov، نويسنده , , S.V. and Kazak-Kazakevich، نويسنده , , A.Z. and Lyutetskaja، نويسنده , , I.G. and Sazanov، نويسنده , , A.P.، نويسنده ,
Abstract :
Silicon carbide application as substrate material for epitaxial growth and for device fabrication strongly depends on the possibilities of surface processing. The aim of the present paper is to study the influence of the different types of surface processing and their consequence on the silicon carbide surface morphology and removal of the mechanically damaged near-surface layer.
