III–V–N compounds for infrared applications

III–V alloys containing nitrogen and As or P are potential candidate materials for infrared applications. The most studied material in this system is GaAs1−xNx. After reviewing the early experiments, and some theoretical predictions, we describe growth experiments by metalorganic molecular beam epitaxy, in which highly crystalline, single phase material was obtained for x≤0.18. Room temperature photoluminescence was measured for layers with x=0.73%. The GaAsN alloys seem to exhibit a composition dependent bowing parameter.