Author/Authors :
Pozina، نويسنده , , G and Ivanov، نويسنده , , I and Monemar، نويسنده , , J.V. Thordson، نويسنده , , J and Andersson، نويسنده , , T.G، نويسنده ,
Abstract :
We report on low-temperature (T=2 K) optical studies of GaNAs epi-layers with different nitrogen concentrations grown by molecular beam epitaxy (MBE). The content of N in the layers was analyzed by X-ray diffraction (XRD) and secondary-ion mass spectrometry (SIMS). Using absorption data we have determined the fundamental band gap energy and the bowing parameter as a function of nitrogen concentration in the GaNxAs1-x alloy up to x=4%.
