The evolution of a-GaAs1−xNx/c-GaAs interface states as a function of Ar-NH3 plasma

This work concerns investigations on electrical properties of amorphous GaAs1−xNx thin films grown on GaAs substrates. Film deposition was carried out by RF sputtering of a GaAs target by adding a nitrogen carrier gas (NH3) to an Ar plasma. Chemical etching of substrates followed by different plasma treatments (like reverse bias and/or NH3 glow discharge) prior to film deposition have been studied. The effects of substrate and growth temperature and of total pressure in the reactor have been analysed. Electrical characteristics (C–V and C–V(T)) have enabled us to put in evidence the evolution of interface states of the a-GaAs1−xNx/c-GaAs junctions. The amorphous GaAs1−xNx thin films are potentially interesting to be considered for GaAs-based MIS structures, due to their relatively high resistivity values, or as passivating layers on GaAs devices.