Author/Authors :
Bigenwald، نويسنده , , P. and Christol، نويسنده , , P. and Konczewicz، نويسنده , , L. and Testud، نويسنده , , P. and Gil، نويسنده , , B.، نويسنده ,
Abstract :
We report here on the study of the theoretical optical properties of Ga based nitrides systems. The dipolar matrix elements and hole effective masses are presented as a function of the reciprocal wavevector for strained bulk GaN. We compute then the A, B and C exciton binding energies for strained GaN/Al0.2Ga0.8N quantum structures and present the calculated optical density for a 50 إ wide well.
