Author/Authors :
Feuillet، نويسنده , , G and Widmann، نويسنده , , F and Daudin، نويسنده , , B and Schuler، نويسنده , , J and Arlery، نويسنده , , M and Rouvière، نويسنده , , J.L and Pelekanos، نويسنده , , N and Briot، نويسنده , , O، نويسنده ,
Abstract :
The epitaxial growth of both cubic and hexagonal GaN epilayers is considered here with the aim of comparing their physical properties. In particular, the growth mechanisms at the first stages of growth will be dealt with together with the quality of the growth front. The optical characteristics of the epilayers will be compared by reference to the structure of the defects present within the different types of layers.
