Author/Authors :
Burke، نويسنده , , T.M and Ritchie، نويسنده , , D.A and Linfield، نويسنده , , E.H and OʹSullivan، نويسنده , , M.P and Burroughes، نويسنده , , J.H and Leadbeater، نويسنده , , M.L and Holmes، نويسنده , , S.N and Norman، نويسنده , , C.E and Shields، نويسنده , , A.J and Pepper، نويسنده , , M، نويسنده ,
Abstract :
We have regrown, on ex situ patterned GaAs substrates, using hydrogen radical decontamination, two-dimensional electron gases (2DEGs) confined in 15 nm quantum wells (QWs) with the inverted AlGaAs/GaAs interface 30 nm from the regrowth interface (RI), which conduct before illumination at 1.5 K. Mobilities in excess of 1×106 cm2 V−1 s−1 have been achieved. We have not observed a degradation in the mobility for a constant carrier concentration between 2DEGs, 200 and 30 nm from the RI. A control structure with the 2DEG 30 nm from the RI was also grown on an un-patterned GaAs substrate that was only thermally cleaned, which had a maximum mobility of 3×104 cm2 V−1 s−1 after illumination at 1.5 K.
