Title of article
Effects of growth interruption on uniformity of GaAs quantum wires formed on vicinal GaAs(110) surfaces by MBE
Author/Authors
Nakashima، نويسنده , , Hisao and Kato، نويسنده , , Takehiko and Maehashi، نويسنده , , Kenzo and Nishida، نويسنده , , Takehiro and Inoue، نويسنده , , Yoshiji and Takeuchi، نويسنده , , Toshikazu and Inoue، نويسنده , , Koichi and Fischer، نويسنده , , Peter and Christen، نويسنده , , Jürgen and Grundmann، نويسنده , , Marius and Bimberg، نويسنده , , Dieter، نويسنده ,
Pages
4
From page
229
To page
232
Abstract
GaAs quantum wires are naturally formed by MBE on vicinal GaAs(110) surfaces with coherently aligned giant growth steps due to thickness modulation at step edges. Two-step growth with growth interruption is employed to improve uniformity and confinement energies of quantum wires, which are confirmed by photo and cathodoluminescence measurements.
Keywords
cathodoluminescence , Photoluminescence , GaAs quantum wire , Molecular Beam Epitaxy , Vicinal surface , Growth interruption
Journal title
Astroparticle Physics
Record number
2065360
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