Author/Authors :
Rodr??guez Messmer، نويسنده , , S. Lourdudoss، نويسنده , , S and Ahopelto، نويسنده , , J and Lipsanen، نويسنده , , H and Hieke، نويسنده , , K and Wesstr?m، نويسنده , , J.-O and Reithmaier، نويسنده , , J.P and Kerkel، نويسنده , , K and Forchel، نويسنده , , A and Seifert، نويسنده , , W and Carlsson، نويسنده , , N and Samuelson، نويسنده , , L، نويسنده ,
Abstract :
The flexibility of hydride vapour phase epitaxy (HVPE) for fabricating nanostructures is demonstrated by exemplifying three cases: (1) improvement of optical characteristics of wet etched wires after overgrowth, (2) improvement of electrical characteristics of reactive ion etched wires after regrowth and (3) fabrication of InP templates on GaAs substrate written previously with focused ion beam (FIB).
Keywords :
Hydride vapour phase epitaxy , Patterned and selective area growth , Reduction of non-radiative centres
