Author/Authors :
Polyakov، نويسنده , , A.Y. and Smirnov، نويسنده , , N.B. and Govorkov، نويسنده , , A.V. and Chelniy، نويسنده , , A.A. and Milnes، نويسنده , , A.G. and Li، نويسنده , , Xiaolei and Leiferov، نويسنده , , B.M. and Aluev، نويسنده , , A.N.، نويسنده ,
Abstract :
The conduction band offset value for an In0.5(Ga0.3Al0.7)0.5P/In0.5Ga0.5P heterojunction has been measured by means of deep level transient spectroscopy (DLTS) on Au/n-InGaAlP Schottky diodes with an InGaP quantum well incorporated into InGAlP.The offset value thus obtained is (0.23 ± 0.025) eV or (0.53 ± 0.06)ΔEg (ΔEg being the bandgap difference between the InGaAlP and the InGaP).This is an intermediate value between the one derived from C- V profiling measurements and low-temperature photoluminescence measurements.
