Author/Authors :
Bouarissa، نويسنده , , N. and Zaouixaa، نويسنده , , A. and Dufour، نويسنده , , J.P. and Certier، نويسنده , , M. and Aourag، نويسنده , , H.، نويسنده ,
Abstract :
The variation of the direct and indirect band gaps of GaSb with pressure and temperature has been calculated using the adjacent empirical pseudopotential method. Our results for most of the gaps agree well with those of the experimental one. The contribution of the thermal expansion term to the temperature dependence of the gaps has been estimated and the results show that this effect is more important for the direct gap than the indirect one.
