Author/Authors :
Sehgal، نويسنده , , B.K. and Gulati، نويسنده , , R. and Naik، نويسنده , , A.A. and Vinayak، نويسنده , , Seema and Rawal، نويسنده , , D.S. and Sharma، نويسنده , , H.S.، نويسنده ,
Abstract :
Rf sputtered Ti/Pt/Au Schottky contacts with varying titanium thickness have been made on (n)GaAs by the lift-off process under actual device processing conditions. The ideality factor of the Schottky barrier is dose to unity (∼ 1.07) with a barrier height of 0.80 ± 0.02 eV. The contacts with Ti films as thin as 100 Å remain thermally stable with annealing up to 400°C. These contacts have been next used to fabricate submicron gate length GaAs MESFETs. The MESFETʹs gm increases with improved gate diode ideality but is not a strong function of it. The effect of Schottky gate annealing on the MESFETʹs dc characteristics shows that IDSS, gm, Vp and VR(GS) remain stable with annealing upto 350°C and degrade with 400° anneal.
