Title of article :
Characterization of p-AglnSe2/n-Zn0.35Cd0.65S polycrystalline thin film heterojunctions
Author/Authors :
Ramesh، نويسنده , , P.P. and Hussain، نويسنده , , O.Md. and Uthanna، نويسنده , , S. and Naidu، نويسنده , , B.S. and Reddy، نويسنده , , P.J.، نويسنده ,
Pages :
4
From page :
27
To page :
30
Abstract :
Polycrystalline thin film p-AglnSe2/n-Zn0.35Cd0.65S heterojunctions were fabricated and the current density-voltage, capacitancevoltage and spectral response characteristics of the junctions were studied. The heterojunction was illuminated in the back-wall configuration and an open-circuit voltage of 425 mV, a short-circuit current density of 30 mA cm−2 and an electrical conversion efficiency of 7.5% have been obtained for a cell with an active area of 1 cm2 under a solar input of 100 mW cm−2.
Keywords :
Semiconductor , solar cells , Electrical properties and measurements , Optical properties
Journal title :
Astroparticle Physics
Record number :
2066035
Link To Document :
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