Self-interstitial related reactions in silicon irradiated by light ions

Recent deep level transient spectroscopy (DLTS), electron paramagnetic resonance (EPR) and infrared (IR) spectroscopy data on interactions of self-interstitial with carbon, aluminium, oxygen and hydrogen in silicon irradiated by light ions are reviewed. Self-interstitial behaviour in silicon was studied by monitoring known impurity interstitials such as Ci, Ali and (Si–O)i. It is concluded that self-interstitials may be stable up to room temperature at the equilibrium state in p-type and intrinsic silicon. Reversible trapping of self-interstitials by oxygen atoms, hydrogen-enhanced migration of interstitial aluminium as well as the origin of hydrogen-self-interstitial complexes are discussed.