Title of article
MOCVD growth and characterization of AlGaInN multiple quantum well heterostructures and laser diodes
Author/Authors
Bour، نويسنده , , D.P and Kneissl، نويسنده , , M and Hofstetter، نويسنده , , D and Romano، نويسنده , , L.T and McCluskey، نويسنده , , M and Van de Walle، نويسنده , , C.G and Krusor، نويسنده , , B.S and Dunnrowicz، نويسنده , , C and Donaldson، نويسنده , , R and Walker، نويسنده , , J and Johnson، نويسنده , , N.M، نويسنده ,
Pages
6
From page
33
To page
38
Abstract
We demonstrate room temperature, pulsed, current-injected operation of InGaAlN heterostructure laser diodes with mirrors fabricated by chemically assisted ion beam etching. The multiple quantum well devices were grown by organo–metallic vapor phase epitaxy on c-face sapphire substrates. The emission wavelengths of the gain-guided laser diodes were ∼400 nm. The lowest threshold current density obtained was 6 kA cm−2 with maximum output powers of 50 mW per facet. Optically-pumped distributed-feedback laser operation was also achieved.
Keywords
semiconductor lasers , CVD , nitrides , Epitaxial deposition , Quantum well semiconductor epitaxial layers , Quantum well lasers , Semiconductor heterojunctions
Journal title
Astroparticle Physics
Record number
2066564
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