Title of article :
Artificial neural network prediction of the band gap and melting point of binary and ternary compound semiconductors
Author/Authors :
Zhaochun، نويسنده , , Zhang and Ruiwu، نويسنده , , Peng and Nianyi، نويسنده , , Chen، نويسنده ,
Abstract :
In this paper, an artificial neural network trained by experimental data has been used to predict the values of the band gap and melting point of III–V, II–VI binary and I–III–VI2, II–IV–V2 ternary compound semiconductors. The calculated results were in good agreement with the experimental ones.
Keywords :
III–V , II–VI , II–IV–V2 , Band gap , melting point , Artificial neural network , I–III–VI2
Journal title :
Astroparticle Physics
