Title of article :
Defect origin and development in sublimation grown SiC boules
Author/Authors :
Tuominen، نويسنده , , M. and Yakimova، نويسنده , , R. and Vehanen، نويسنده , , A. and Janzén، نويسنده , , E.، نويسنده ,
Abstract :
SiC boules were grown by the modified Lely method. Macro-defects in the boules and wafers cut from them were studied by means of optical microscopy and chemical etching. The influence of the quality, the surface orientation and attachment of the seed crystal on secondary evaporation, domain and micropipe formation was studied. The results obtained are discussed in terms of defect development at different stages of the crystal growth and under different growth conditions.
Keywords :
Silicon carbide crystals , sublimation growth , Optical microscopy , Macro-defect
Journal title :
Astroparticle Physics
