Investigations on the estimation of arsenic atoms and growth of GaAs epitaxial layers from bismuth solution

The growth kinetics of GaAs binary system from Bi solution using LPE technique have been investigated. Solubility of the arsenic atoms in Bi solution at different elevated temperatures have been evaluated. The concentration profiles of arsenic atoms have been constructed for the temperatures 973 and 1073 K using appropriate boundary conditions. The thickness of the grown layers has been simulated for different cooling rates and compared with experimental results. The grown layers have been characterised using photoluminescence, HALL measurements and EDAX.