Title of article :
The influence of Cu doping on opto-electronic properties of chemically deposited CdS
Author/Authors :
Petre، نويسنده , , D and Pintilie، نويسنده , , I and Pentia، نويسنده , , E and Pintilie، نويسنده , , I and Botila، نويسنده , , T، نويسنده ,
Pages :
6
From page :
238
To page :
243
Abstract :
Cadmium sulphide (CdS) thin films were deposited on glass substrate by precipitation from aqueous solution technique. The films were doped with copper using the direct method consisting in the addition of a copper salt (CuCl2) in the deposition bath of CdS. The doped films were annealed in air, at 300°C, for 1 h. We report some structural, optical, electrical and photoelectrical properties of CdS thin films before and after Cu doping, correlated with investigation of trapping levels by Thermally Stimulated Currents (TSC) method.
Keywords :
Thermally stimulated currents , Opto-electronic , Chemically deposited CdS
Journal title :
Astroparticle Physics
Record number :
2067289
Link To Document :
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