Author/Authors :
Carter، نويسنده , , Jr.، نويسنده , , C.H. and Tsvetkov، نويسنده , , V.F. and Glass، نويسنده , , R.C. and Henshall، نويسنده , , A. B. Hamza and D. J. Brady، نويسنده , , M. and Müller، نويسنده , , St.G. and Kordina، نويسنده , , O. and Irvine، نويسنده , , K. and Edmond، نويسنده , , J.A. and Kong، نويسنده , , H.-S. and Singh، نويسنده , , R. and Allen، نويسنده , , S.T. and Palmour، نويسنده , , J.W.، نويسنده ,
Abstract :
Silicon carbide technology has made tremendous strides in the last several years, with a variety of encouraging device and circuit demonstrations in addition to volume production of nitride-based blue LEDs being fabricated on SiC substrates. The commercial availability of relatively large, high quality wafers of the 6H and 4H polytypes of SiC for device development has facilitated these exciting breakthroughs in laboratories throughout the world. These have occurred in numerous application areas, including high power devices, short wavelength optoelectronic devices, and high power/high frequency devices. This paper will describe progress made in increasing the quality and size of SiC wafers, advances in SiC epitaxy and some of the resulting device demonstrations and commercialization by Cree Research.
Keywords :
SiC , Wafers , Micropipe , epitaxy , diode , Blue LED , microwave
