State of the art in the modelling of SiC sublimation growth

Different computational tools have helped to provide additional information on the sublimation growth of SiC single crystals by the modified-Lely method. The modelling work was motivated by the need of a better control of the local temperature field inside the crucible. Because there is an environment of strong thermal radiation in which the SiC boule growth process occurs, heat transfer must therefore be coupled with gaseous species transport and reactivity. This highly coupled model must take into account all geometric modifications in crucibles which strongly influences the crystal growth process. Local thermochemical equilibrium linked to heat and mass transfer is the model proposed in this paper to give the magnitude of the growth rate and the shape of the crystal. This modelling field is still too young to propose a software package including all modelling aspects and a reliable material database. However, some parts of the modelling work have reached maturity like electromagnetic heating and thermal modelling coupled with simplified chemical models. We show in this paper selected examples in order to demonstrate the types of information which can be routinely available by simulation and how to approach defect formation from a macroscopic point of view. Minor geometric modifications of the holes for pyrometric measurements drastically change the magnitude of thermal gradients in the crucible. Geometric modifications of the crucible change the computed crystal shapes. The calculated results complete the experimental knowledge by a quantification of the local macroscopic fields.