Title of article
Optimization of sublimation growth of SiC bulk crystals using modeling
Author/Authors
Ramm، نويسنده , , M.S and Mokhov، نويسنده , , E.N and Demina، نويسنده , , S.E and Ramm، نويسنده , , M.G. and Roenkov، نويسنده , , A.D. and Vodakov، نويسنده , , Yu.A and Segal، نويسنده , , A.S and Vorob’ev، نويسنده , , A.N and Karpov، نويسنده , , S.Yu and Kulik، نويسنده , , A.V and Makarov، نويسنده , , Yu.N، نويسنده ,
Pages
6
From page
107
To page
112
Abstract
Analysis of factors determining growth rate and shape of the crystallization front during sublimation growth of bulk SiC crystals is presented. For this purpose, mass transport of species in the graphite crucible coupled with global heat transfer in a sublimation growth system is studied. Specific features of the growth process in a tantalum container are discussed.
Keywords
Etching of graphite , Bulk crystals , SiC , sublimation growth , Tantalum container
Journal title
Astroparticle Physics
Record number
2067398
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