Author/Authors :
Ellison، نويسنده , , A. and Zhang، نويسنده , , J. and Peterson، نويسنده , , J. and Henry، نويسنده , , A. and Wahab، نويسنده , , Q. and Bergman، نويسنده , , J.P. and Makarov، نويسنده , , Y.N. and Vorob’ev، نويسنده , , A. and Vehanen، نويسنده , , A. and Janzén، نويسنده , , E.، نويسنده ,
Abstract :
Two high temperature CVD techniques, respectively optimised for epitaxial and crystal growth, are presented. A chimney reactor has been developed for fast epitaxy, carried out at 1700–1900°C, with growth rates ranging from 10 to 25 μm h−1, and a material quality close to conventional CVD processes. The growth of 4H-SiC epilayers with low n-type doping (1014–1015 cm−3) and carrier lifetimes up to ∼0.4 μs is described, while the feasibility of high voltage Schottky rectifiers (1.8 kV) is demonstrated. On the other side, developments of the stagnant flow HTCVD process, where growth is carried out at 2000–2300°C, are shown to enable growth rates ranging from 0.3 up to 0.8 mm h−1. The main characteristics of HTCVD grown SiC crystals (up to nearly 7 mm thick) are described.
