Title of article
Modeling analysis of gas phase nucleation in silicon carbide chemical vapor deposition
Author/Authors
Vorob’ev، نويسنده , , A.N and Komissarov، نويسنده , , A.E and Segal، نويسنده , , A.S and Makarov، نويسنده , , Yu.N and Karpov، نويسنده , , S.Yu and Zhmakin، نويسنده , , A.I and Rupp، نويسنده , , R، نويسنده ,
Pages
3
From page
176
To page
178
Abstract
An advanced mathematical model of SiC CVD process accounting for formation and evolution of Si-droplets in the vapor phase is proposed. Effect of temperature on the nucleation process is considered.
Keywords
CVD , SiC , gas phase , Nucleation
Journal title
Astroparticle Physics
Record number
2067414
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