Title of article
Optical assessment of purity improvement effects in bulk 6H and 4H-SiC wafers grown by physical vapor transport
Author/Authors
Camassel، نويسنده , , J and Juillaguet، نويسنده , , S and Planes، نويسنده , , N and Raymond، نويسنده , , A and Grosse، نويسنده , , P and Basset، نويسنده , , G and Faure، نويسنده , , C and Couchaud، نويسنده , , M and Bluet، نويسنده , , J.M and Chourou، نويسنده , , K and Anikin، نويسنده , , M and Madar، نويسنده , , R، نويسنده ,
Pages
7
From page
258
To page
264
Abstract
We report on purity improvement effects which recently have been observed when comparing different series of wafers produced in two separate, but basically similar, home-made physical vapor transport (PVT) reactors. Looking in detail for the origin of this phenomenon, we have found a strong influence of the residual purity of the graphite material used to manufacture the crucibles. After proper optimization, a second effect has been found. It manifests when the residual level of impurities in the seed material is high and provides evidence for in situ auto-doping. Finally, quantitative analyses of C(V) characteristics and Raman spectra have been done. In this way we follow the trend in residual carrier concentration and mobility.
Keywords
Carrier concentration , Carrier mobility , Residual doping , Purity assessment , Bulk SiC
Journal title
Astroparticle Physics
Record number
2067431
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